Developments in single wafer multiprocessingHARRISON, H. B.Microelectronics journal. 1994, Vol 25, Num 1, pp 1-8, issn 0959-8324Article

A tri-layer transmission line model applied to alloyed ohmic contactsREEVES, G. K; HARRISON, H. B.Solid-state electronics. 1995, Vol 38, Num 5, pp 1115-1117, issn 0038-1101Article

Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET'sSITTE, R; DIMITRIJEV, S; HARRISON, H. B et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 11, pp 2210-2215, issn 0018-9383Article

Effect of heat treatment on the properties of gallium-implanted polycrystalline siliconHARRISON, H. B; KOMEN, Y; CAO, D. X et al.Applied physics letters. 1988, Vol 53, Num 9, pp 746-748, issn 0003-6951Article

Titanium silicides formed by rapid thermal vacuum processingDEXIN, C. X; HARRISON, H. B; REEVES, G. K et al.Journal of applied physics. 1988, Vol 63, Num 6, pp 2171-2173, issn 0021-8979Article

Effect of heat treatments on the electrical resistivity of polycrystalline silicon films implanted with antimonyKOMEM, Y; HARRISON, H. B.Applied physics letters. 1987, Vol 50, Num 21, pp 1524-1526, issn 0003-6951Article

New silicon device structures: a quantum leap in microelectronics developmentDIMITRIJEV, S; HARRISON, H. B.Microelectronics journal. 1994, Vol 25, Num 1, pp 9-16, issn 0959-8324Article

Use of an expert system for quality improvement in flexible manufacturing of integrated circuitsSITTE, R; HARRISON, H. B.Computers in industry. 1991, Vol 16, Num 1, pp 35-38, issn 0166-3615Article

Ultra-thin dielectrics for semiconductor applications: growth and characteristicsHARRISON, H. B; DIMITRIJEV, S.Microelectronics. 1991, Vol 22, Num 2, pp 3-38, issn 0026-2692, 36 p.Article

Slow-trap profiling of NO and N₂O nitrided oxides grown on Si and SiC substratesDIMITRIJEV, S; TANNER, P; HARRISON, H. B et al.Microelectronics and reliability. 1999, Vol 39, Num 4, pp 441-449, issn 0026-2714Article

The effects of process induced gate-to-source/drain junction separation in MOSFET structuresROWLANDS, D; DIMITRIJEV, S; HARRISON, H. B et al.Microelectronics and reliability. 1998, Vol 38, Num 12, pp 1855-1866, issn 0026-2714Article

Relaxation of acceptance limits (RAL): A global approach for parametric yield control of 0.1-μm deep submicron MOSFET devicesSITTE, R; DIMITRIJEV, S; HARRISON, H. B et al.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 3, pp 374-377, issn 0894-6507Article

Ohmic contacts formed on single- and polycrystalline silicon using ion implantation and low-temperature annealingHARRISON, H. B; REEVES, G. K.IEEE electron device letters. 1984, Vol 5, Num 2, pp 53-56, issn 0741-3106Article

QsRAM the new memory technologyDIMITRIJEV, S; HARRISON, H. B.SPIE proceedings series. 2004, pp 137-143, isbn 0-8194-5167-3, 7 p.Conference Paper

SIMS analysis of nitrided oxides grown on 4H-SiCTANNER, P; DIMITRIJEV, S; LI, H.-F et al.Journal of electronic materials. 1999, Vol 28, Num 2, pp 109-111, issn 0361-5235Article

Development of power accumulation-type SiC MOSFETLINEWIH, H; DIMITRIJEV, S; HARRISON, H. B et al.SPIE proceedings series. 1999, pp 160-168, isbn 0-8194-3494-9Conference Paper

Improved operation of micromechanical comb-drive actuators through the use of a new angled comb finger designROSA, M. A; DIMITRIJEV, S; HARRISON, H. B et al.SPIE proceedings series. 1997, pp 212-218, isbn 0-8194-2680-6Conference Paper

Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line modelREEVES, G. K; LEECH, P. W; HARRISON, H. B et al.Solid-state electronics. 1995, Vol 38, Num 4, pp 745-751, issn 0038-1101Article

Some recent applications of the discrete element method = Applications récentes de la méthode des éléments dicretsHARRISON, H. B.Computers & structures. 1991, Vol 41, Num 6, pp 1249-1254, issn 0045-7949Conference Paper

A novel fibre-to-waveguide coupling method using silicon-on-insulator micromachining techniquesNGO, N. Q; ROSA, M. A; SWEATMAN, D et al.SPIE proceedings series. 1999, pp 385-394, isbn 0-8194-3492-2Conference Paper

Physical and electrical properties of thin dielectrics prepared by photo-assisted growth in an NO environmentJAMET, P; HARRISON, H. B; DIMITRIJEV, S et al.SPIE proceedings series. 1999, pp 298-305, isbn 0-8194-3493-0Conference Paper

Improved operation of micromechanical comb-drive actuators through the use of a new angled comb finger designROSA, M. A; DIMITRIJEV, S; HARRISON, H. B et al.Journal of intelligent material systems and structures. 1998, Vol 9, Num 4, pp 283-290, issn 1045-389XConference Paper

Slow state characterization by measurements of current-voltage characteristics of MOS capacitorsDIMITRIJEV, S; TANNER, P; YAO, Z.-Q et al.Microelectronics and reliability. 1997, Vol 37, Num 7, pp 1143-1146, issn 0026-2714Article

An analytical model for alloyed ohmic contacts using a trilayer transmission line modelREEVES, G. K; HARRISON, H. B.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 8, pp 1536-1547, issn 0018-9383Article

The electrical properties of sub-5-nm oxynitride dielectrics prepared in a nitric oxide ambient using rapid thermal processingYAO, Z.-Q; HARRISON, H. B; DIMITRIJEV, S et al.IEEE electron device letters. 1994, Vol 15, Num 12, pp 516-518, issn 0741-3106Article